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  • 参数资料
    型号: DCR1279SD47
    厂商: DYNEX SEMICONDUCTOR LTD
    元件分类: 晶闸管
    英文描述: Phase Control Thyristor
    中文描述: 1709 A, 4700 V, SCR
    文件页数: 3/9页
    文件大?。?/td> 71K
    代理商: DCR1279SD47
    DCR1279SD
    3/9
    DYNAMIC CHARACTERISTICS
    Parameter
    Symbol
    Conditions
    Typ.
    Max.
    Units
    GATE TRIGGER CHARACTERISTICS AND RATINGS
    V
    DRM
    = 5V, T
    case
    = 25
    o
    C
    Conditions
    Parameter
    Symbol
    V
    GT
    Gate trigger voltage
    V
    DRM
    = 5V, T
    case
    = 25
    o
    C
    I
    GT
    Gate trigger current
    V
    GD
    Gate non-trigger voltage
    At V
    DRM
    T
    case
    = 125
    o
    C
    4.0
    V
    400
    mA
    0.25
    V
    Max.
    Units
    V
    FGM
    Peak forward gate voltage
    Anode positive with respect to cathode
    V
    FGN
    Peak forward gate voltage
    Anode negative with respect to cathode
    V
    RGM
    Peak reverse gate voltage
    I
    FGM
    Peak forward gate current
    Anode positive with respect to cathode
    P
    GM
    Peak gate power
    See table, fig.4
    P
    G(AV)
    Mean gate power
    30
    V
    0.25
    V
    5
    V
    10
    A
    150
    W
    5
    W
    I
    RRM
    /I
    DRM
    Peak reverse and off-state current
    At V
    RRM
    /V
    DRM
    , T
    case
    = 125
    o
    C
    From 67% V
    to 1000A
    Gate source 10V, 5
    t
    r
    0.5
    μ
    s, T
    j
    = 125
    o
    C
    dV/dt
    Maximum linear rate of rise of off-state voltage
    To 67% V
    DRM
    T
    j
    = 125
    o
    C. Gate open circuit.
    -
    150
    mA
    -
    300
    V/
    μ
    s
    Repetitive 50Hz
    -
    100
    A/
    μ
    s
    Non-repetitive
    -
    200
    A/
    μ
    s
    Rate of rise of on-state current
    dI/dt
    V
    T(TO)
    Threshold voltage
    At T
    vj
    = 125
    o
    C
    r
    T
    On-state slope resistance
    At T
    vj
    = 125
    o
    C
    t
    gd
    Delay time
    1.14
    -
    V
    -
    0.587
    m
    -
    2.5
    μ
    s
    V
    = 67% V
    DRM
    , Gate source 30V, 15
    t
    r
    = 0.5
    μ
    s, T
    j
    o
    C
    I
    L
    Latching current
    T
    j
    = 25
    o
    C, V
    D
    = 5V
    I
    H
    Holding current
    T
    j
    = 25
    o
    C, R
    g-k
    =
    300
    1000
    mA
    -
    500
    mA
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  • 2015第十届中国常州先进制造技术成果展示洽谈会——中国常州网专题 2019-01-06
  • 全国人大常委会执法检查组在江苏开展大气污染防治法执法检查 2019-01-06
  • 2017年山西省“十强报刊”巡礼 2019-01-02